Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김동하 | * |
dc.date.accessioned | 2016-11-18T02:11:48Z | - |
dc.date.available | 2016-11-18T02:11:48Z | - |
dc.date.issued | 2016 | * |
dc.identifier.issn | 1613-6810 | * |
dc.identifier.other | OAK-19491 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/232755 | - |
dc.description.abstract | 2D nanomaterials have been actively utilized in non-volatile resistive switching random access memory (ReRAM) devices due to their high flexibility, 3D-stacking capability, simple structure, transparency, easy fabrication, and low cost. Herein, it demonstrates re-writable, bistable, transparent, and flexible solution-processed crossbar ReRAM devices utilizing graphene oxide (GO) based multilayers as active dielectric layers. The devices employ single- or multi-component-based multilayers composed of positively charged GO (N-GO(+) or NS-GO(+)) with/without negatively charged GO(-) using layer-by-layer assembly method, sandwiched between Al bottom and Au top electrodes. The device based on the multi-component active layer Au/[N-GO(+)/GO(-)]n/Al/PES shows higher ON/OFF ratio of ≈105 with switching voltage of −1.9 V and higher retention stability (≈104 s), whereas the device based on single component (Au/[N-GO(+)]n/Al/PES) shows ≈103 ON/OFF ratio at ±3.5 V switching voltage. The superior ReRAM properties of the multi-component-based device are attributed to a higher coating surface roughness. The Au/[N-GO(+)/GO(–)]n/Al/PES device prepared from lower GO concentration (0.01%) exhibits higher ON/OFF ratio (≈109) at switching voltage of ±2.0 V. However, better stability is achieved by increasing the concentration from 0.01% to 0.05% of all GO-based solutions. It is found that the devices containing MnO2 in the dielectric layer do not improve the ReRAM performance. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | * |
dc.language | English | * |
dc.publisher | Wiley-VCH Verlag | * |
dc.subject | 2D nanosheet multilayers | * |
dc.subject | graphene oxide | * |
dc.subject | layer-by-layer self-assembly | * |
dc.subject | resistive random access memory | * |
dc.title | Non-Volatile ReRAM Devices Based on Self-Assembled Multilayers of Modified Graphene Oxide 2D Nanosheets | * |
dc.type | Article | * |
dc.relation.issue | 44 | * |
dc.relation.volume | 12 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 6167 | * |
dc.relation.lastpage | 6174 | * |
dc.relation.journaltitle | Small | * |
dc.identifier.doi | 10.1002/smll.201602276 | * |
dc.identifier.wosid | WOS:000389407000013 | * |
dc.identifier.scopusid | 2-s2.0-84990050966 | * |
dc.author.google | Rani A. | * |
dc.author.google | Velusamy D.B. | * |
dc.author.google | Kim R.H. | * |
dc.author.google | Chung K. | * |
dc.author.google | Mota F.M. | * |
dc.author.google | Park C. | * |
dc.author.google | Kim D.H. | * |
dc.contributor.scopusid | 김동하(26039227400) | * |
dc.date.modifydate | 20240123104500 | * |