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Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics

Title
Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics
Authors
Jeong B.-J.Joung M.-R.Kweon S.-H.Kim J.-S.Nahm S.Choi J.-W.Hwang S.-J.
Ewha Authors
황성주
SCOPUS Author ID
황성주scopus
Issue Date
2012
Journal Title
Journal of the American Ceramic Society
ISSN
0002-7820JCR Link
Citation
vol. 95, no. 6, pp. 1811 - 1813
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC. © 2012 The American Ceramic Society.
DOI
10.1111/j.1551-2916.2012.05222.x
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자연과학대학 > 화학·나노과학전공 > Journal papers
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