Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 황성주 | - |
dc.date.accessioned | 2016-08-28T12:08:30Z | - |
dc.date.available | 2016-08-28T12:08:30Z | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 0002-7820 | - |
dc.identifier.other | OAK-8862 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/222715 | - |
dc.description.abstract | When Bi 2O 3 was added to LiAlSiO 4 ceramics, Bi 12SiO 20 secondary phase was formed. Since the melting temperature of Bi 12SiO 20 ceramics is 880°C, the liquid phase is expected to form during sintering and to assist the densification of LiAlSiO 4 ceramics. When 15.0 mol% Bi 2O 3 was added, the LiAlSiO 4 ceramics could be sintered at 900°C, and with 20.0 mol% Bi 2O 3 they could even be sintered at 875°C. The 15.0 mol% Bi 2O 3-doped LiAlSiO 4 ceramics sintered at 900°C exhibited good microwave dielectric properties, namely, a low ε r of 4.3, a high Q × f of 62 430 GHz and a small τ f of -16.21 ppm/ oC. © 2012 The American Ceramic Society. | - |
dc.language | English | - |
dc.title | Effect of Bi 2 O 3 doping on the sintering temperature and microwave dielectric properties of Li Al SiO 4 ceramics | - |
dc.type | Article | - |
dc.relation.issue | 6 | - |
dc.relation.volume | 95 | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.startpage | 1811 | - |
dc.relation.lastpage | 1813 | - |
dc.relation.journaltitle | Journal of the American Ceramic Society | - |
dc.identifier.doi | 10.1111/j.1551-2916.2012.05222.x | - |
dc.identifier.wosid | WOS:000304765500007 | - |
dc.identifier.scopusid | 2-s2.0-84861838625 | - |
dc.author.google | Jeong B.-J. | - |
dc.author.google | Joung M.-R. | - |
dc.author.google | Kweon S.-H. | - |
dc.author.google | Kim J.-S. | - |
dc.author.google | Nahm S. | - |
dc.author.google | Choi J.-W. | - |
dc.author.google | Hwang S.-J. | - |
dc.contributor.scopusid | 황성주(7404626171) | - |
dc.date.modifydate | 20190901081003 | - |