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Schottky contacts to polar and nonpolar n-type GaN

Title
Schottky contacts to polar and nonpolar n-type GaN
Authors
Kim H.Phark S.-H.Song K.-M.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2012
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 60, no. 1, pp. 104 - 107
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability. © 2012 The Korean Physical Society.
DOI
10.3938/jkps.60.104
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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