Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김동욱 | * |
dc.date.accessioned | 2016-08-28T12:08:23Z | - |
dc.date.available | 2016-08-28T12:08:23Z | - |
dc.date.issued | 2012 | * |
dc.identifier.issn | 0374-4884 | * |
dc.identifier.other | OAK-8789 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/222651 | - |
dc.description.abstract | Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability. © 2012 The Korean Physical Society. | * |
dc.language | English | * |
dc.title | Schottky contacts to polar and nonpolar n-type GaN | * |
dc.type | Article | * |
dc.relation.issue | 1 | * |
dc.relation.volume | 60 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.index | KCI | * |
dc.relation.startpage | 104 | * |
dc.relation.lastpage | 107 | * |
dc.relation.journaltitle | Journal of the Korean Physical Society | * |
dc.identifier.doi | 10.3938/jkps.60.104 | * |
dc.identifier.wosid | WOS:000304094600021 | * |
dc.identifier.scopusid | 2-s2.0-84862897763 | * |
dc.author.google | Kim H. | * |
dc.author.google | Phark S.-H. | * |
dc.author.google | Song K.-M. | * |
dc.author.google | Kim D.-W. | * |
dc.contributor.scopusid | 김동욱(57203350633) | * |
dc.date.modifydate | 20240123114549 | * |