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Flexible organic field-effect transistors and complementary inverters based on a solution-processable quinoidal oligothiophene derivative

Title
Flexible organic field-effect transistors and complementary inverters based on a solution-processable quinoidal oligothiophene derivative
Authors
Ribierre J.C.Takaishi K.Muto T.Aoyama T.
Ewha Authors
Jean Charles Ribierre
Issue Date
2011
Journal Title
Optical Materials
ISSN
0925-3467JCR Link
Citation
vol. 33, no. 9, pp. 1415 - 1418
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
We report on the fabrication and characterization of ambipolar organic field-effect transistors based on the solution-processable quinoidal oligothiophene [QQT(CN)4] and using a new fluorinated polymer (AL-X601) with a dielectric constant of 3.1 as dielectric material layer. As-prepared devices show ambipolar transport with hole and electron field-effect mobilities of 6 × 10 -2 and 5 × 10 -3 cm 2/V s respectively as well as an on and off state current ratio higher than 10 3. Influence of a thermal annealing on the device performances was investigated and was found to lead to a majority carrier type conversion from a p-type to an n-type dominant behavior. QQT(CN)4 based field-effect transistors and complementary inverters fabricated on flexible substrates and using Al-X601 as gate dielectric material show high performance and good mechanical stability. © 2011 Elsevier B.V. All rights reserved.
DOI
10.1016/j.optmat.2011.03.015
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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