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dc.contributor.authorJean Charles Ribierre-
dc.date.accessioned2017-08-28T22:04:42Z-
dc.date.available2017-08-28T22:04:42Z-
dc.date.issued2011-
dc.identifier.issn0925-3467-
dc.identifier.otherOAK-7758-
dc.identifier.urihttp://dspace.ewha.ac.kr/handle/2015.oak/221770-
dc.description.abstractWe report on the fabrication and characterization of ambipolar organic field-effect transistors based on the solution-processable quinoidal oligothiophene [QQT(CN)4] and using a new fluorinated polymer (AL-X601) with a dielectric constant of 3.1 as dielectric material layer. As-prepared devices show ambipolar transport with hole and electron field-effect mobilities of 6 × 10 -2 and 5 × 10 -3 cm 2/V s respectively as well as an on and off state current ratio higher than 10 3. Influence of a thermal annealing on the device performances was investigated and was found to lead to a majority carrier type conversion from a p-type to an n-type dominant behavior. QQT(CN)4 based field-effect transistors and complementary inverters fabricated on flexible substrates and using Al-X601 as gate dielectric material show high performance and good mechanical stability. © 2011 Elsevier B.V. All rights reserved.-
dc.languageEnglish-
dc.titleFlexible organic field-effect transistors and complementary inverters based on a solution-processable quinoidal oligothiophene derivative-
dc.typeArticle-
dc.relation.issue9-
dc.relation.volume33-
dc.relation.indexSCI-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.startpage1415-
dc.relation.lastpage1418-
dc.relation.journaltitleOptical Materials-
dc.identifier.doi10.1016/j.optmat.2011.03.015-
dc.identifier.wosidWOS:000292425500011-
dc.identifier.scopusid2-s2.0-79957930972-
dc.author.googleRibierre J.C.-
dc.author.googleTakaishi K.-
dc.author.googleMuto T.-
dc.author.googleAoyama T.-
dc.date.modifydate20160803155220-
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자연과학대학 > 물리학전공 > Journal papers
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