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Resistive switching and transport characteristics of cu/a-Si/Si devices

Title
Resistive switching and transport characteristics of cu/a-Si/Si devices
Authors
Kang B.S.Cha D.Lee S.Na S.-C.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2011
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 58, no. 5, pp. 1156 - 1159
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We prepared Cu/amorphous silicon (a-Si)/Si structures with active device diameters of 5, 10, and 20 μm. The Cu/a-Si/Si devices showed bipolar resistive switching (RS) behaviors and the ON/OFF ratio was larger than 10 6. In the low-resistance state (LRS), the current-voltage (I-V) curves of the 10- and 20-μm-sized devices were linear. In contrast, the LRS I-V curves for the 5-μm-sized devices were symmetric and nonlinear, which could be explained by tunnelling conduction. The Cu/a-Si/Si devices consist of materials compatible with conventional CMOS processes and can be candidates for nonvolatile memory devices.
DOI
10.3938/jkps.58.1156
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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