Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김동욱 | * |
dc.date.accessioned | 2016-08-28T12:08:44Z | - |
dc.date.available | 2016-08-28T12:08:44Z | - |
dc.date.issued | 2011 | * |
dc.identifier.issn | 0374-4884 | * |
dc.identifier.other | OAK-7620 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/221658 | - |
dc.description.abstract | We prepared Cu/amorphous silicon (a-Si)/Si structures with active device diameters of 5, 10, and 20 μm. The Cu/a-Si/Si devices showed bipolar resistive switching (RS) behaviors and the ON/OFF ratio was larger than 10 6. In the low-resistance state (LRS), the current-voltage (I-V) curves of the 10- and 20-μm-sized devices were linear. In contrast, the LRS I-V curves for the 5-μm-sized devices were symmetric and nonlinear, which could be explained by tunnelling conduction. The Cu/a-Si/Si devices consist of materials compatible with conventional CMOS processes and can be candidates for nonvolatile memory devices. | * |
dc.language | English | * |
dc.title | Resistive switching and transport characteristics of cu/a-Si/Si devices | * |
dc.type | Article | * |
dc.relation.issue | 5 | * |
dc.relation.volume | 58 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.index | KCI | * |
dc.relation.startpage | 1156 | * |
dc.relation.lastpage | 1159 | * |
dc.relation.journaltitle | Journal of the Korean Physical Society | * |
dc.identifier.doi | 10.3938/jkps.58.1156 | * |
dc.identifier.wosid | WOS:000290635700018 | * |
dc.identifier.scopusid | 2-s2.0-79957748347 | * |
dc.author.google | Kang B.S. | * |
dc.author.google | Cha D. | * |
dc.author.google | Lee S. | * |
dc.author.google | Na S.-C. | * |
dc.author.google | Kim D.-W. | * |
dc.contributor.scopusid | 김동욱(57203350633) | * |
dc.date.modifydate | 20240123114549 | * |