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Bipolar resistive switching characteristics of Cu/TaOx/Pt structures

Title
Bipolar resistive switching characteristics of Cu/TaOx/Pt structures
Authors
Cha D.Lee S.Jung J.An I.Kim D.-W.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2010
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 56, no. 3, pp. 846 - 850
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaO x layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 103, and the switching voltage was less than 1 V.
DOI
10.3938/jkps.56.846
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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