Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김동욱 | * |
dc.date.accessioned | 2016-08-28T12:08:57Z | - |
dc.date.available | 2016-08-28T12:08:57Z | - |
dc.date.issued | 2010 | * |
dc.identifier.issn | 0374-4884 | * |
dc.identifier.other | OAK-6376 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/220621 | - |
dc.description.abstract | We investigated the electrical properties of Cu/TaOx/Pt structures, which were prepared by RF-sputtering at room temperature. Spectroscopic ellipsometry (SE) measurements revealed that the refractive indices of the TaOx thin films decreased with increasing oxygen-to-argon gas ratio during the growth. The transport analyses based on the Poole-Frenkel emission model yielded the dielectric constant of the TaO x layers; the results were consistent with the SE results. The Cu/TaOx/Pt structures exhibited bipolar resistive switching (RS), and less-oxidized samples showed a more reliable RS behavior than more-oxidized ones. The high-to-low resistance ratio was nearly 103, and the switching voltage was less than 1 V. | * |
dc.language | English | * |
dc.title | Bipolar resistive switching characteristics of Cu/TaOx/Pt structures | * |
dc.type | Article | * |
dc.relation.issue | 3 | * |
dc.relation.volume | 56 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.index | KCI | * |
dc.relation.startpage | 846 | * |
dc.relation.lastpage | 850 | * |
dc.relation.journaltitle | Journal of the Korean Physical Society | * |
dc.identifier.doi | 10.3938/jkps.56.846 | * |
dc.identifier.wosid | WOS:000275624200029 | * |
dc.identifier.scopusid | 2-s2.0-77954837076 | * |
dc.author.google | Cha D. | * |
dc.author.google | Lee S. | * |
dc.author.google | Jung J. | * |
dc.author.google | An I. | * |
dc.author.google | Kim D.-W. | * |
dc.contributor.scopusid | 김동욱(57203350633) | * |
dc.date.modifydate | 20240123114549 | * |