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Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering

Title
Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering
Authors
Park S.Y.Yoo Y.J.Kim P.J.Lee Y.P.Kim T.H.Kang J.-H.
Ewha Authors
김태희
SCOPUS Author ID
김태희scopus
Issue Date
2006
Journal Title
Journal of the Korean Physical Society
ISSN
0374-4884JCR Link
Citation
vol. 49, no. 3, pp. 1029 - 1033
Indexed
SCI; SCIE; SCOPUS; KCI WOS scopus
Abstract
Zn 1-xMn xO films with smooth surfaces were prepared Si(100) substrates by reactive cosputtering of high-purity Mn and ZnO targets in an oxygen ambient with partial pressures ranging from 2.2 × 10 -7 to 1.2 × 10 -5 Torr. The film deposited at an oxygen partial pressure of 2.2 × 10 -7 Torr exhibited a ferromagnetic behavior with a Curie temperature above 350 K while the films for oxygen partial pressures higher than 1.2 × 10 -6 Torr revealed nonmagnetic properties. Our results evidently show that the oxygen vacancy plays an important role in the magnetic ordering of Mn-doped ZnO film. Our experimental results show the possibility for applications of Mn-doped ZnO-based tunneling devices.
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자연과학대학 > 물리학전공 > Journal papers
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