Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태희 | * |
dc.date.accessioned | 2016-08-28T12:08:29Z | - |
dc.date.available | 2016-08-28T12:08:29Z | - |
dc.date.issued | 2006 | * |
dc.identifier.issn | 0374-4884 | * |
dc.identifier.other | OAK-3548 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/219756 | - |
dc.description.abstract | Zn 1-xMn xO films with smooth surfaces were prepared Si(100) substrates by reactive cosputtering of high-purity Mn and ZnO targets in an oxygen ambient with partial pressures ranging from 2.2 × 10 -7 to 1.2 × 10 -5 Torr. The film deposited at an oxygen partial pressure of 2.2 × 10 -7 Torr exhibited a ferromagnetic behavior with a Curie temperature above 350 K while the films for oxygen partial pressures higher than 1.2 × 10 -6 Torr revealed nonmagnetic properties. Our results evidently show that the oxygen vacancy plays an important role in the magnetic ordering of Mn-doped ZnO film. Our experimental results show the possibility for applications of Mn-doped ZnO-based tunneling devices. | * |
dc.language | English | * |
dc.title | Magnetic properties of Mn-doped ZnO films prepared by reactive cosputtering | * |
dc.type | Article | * |
dc.relation.issue | 3 | * |
dc.relation.volume | 49 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.index | KCI | * |
dc.relation.startpage | 1029 | * |
dc.relation.lastpage | 1033 | * |
dc.relation.journaltitle | Journal of the Korean Physical Society | * |
dc.identifier.wosid | WOS:000240570400039 | * |
dc.identifier.scopusid | 2-s2.0-33749860459 | * |
dc.author.google | Park S.Y. | * |
dc.author.google | Yoo Y.J. | * |
dc.author.google | Kim P.J. | * |
dc.author.google | Lee Y.P. | * |
dc.author.google | Kim T.H. | * |
dc.author.google | Kang J.-H. | * |
dc.contributor.scopusid | 김태희(57212232131) | * |
dc.date.modifydate | 20240422115658 | * |