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Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes

Title
Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes
Authors
Choi Y.S.Lee J.Y.Im S.Lee S.J.
Ewha Authors
이승준
SCOPUS Author ID
이승준scopus
Issue Date
2002
Journal Title
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN
0734-211XJCR Link
Citation
vol. 20, no. 6, pp. 2384 - 2387
Indexed
SCOPUS WOS scopus
Abstract
Several n-ZnO/p-Si photodiodes were fabricated using rf-sputter deposition with various Ar/O 2 ratios at 480°C. The I-V measurements performed under continuous illumination on the photodiodes exhibited that a high responsivity of 0.286 A/W could be obtained from the photodiode prepared at an appropriate Ar/O 2 ratio of 6:1. The same diode also showed the least dark current leakage while the diode prepared at the high O 2 partial pressure (Ar/O 2=2:1) revealed the largest. Temporal response was measured up to 35 ns from the best n-ZnO/p-Si diodes with the least current leakage and high responsivity in measurements at the high modulation frequency of 1.5 MHz.
DOI
10.1116/1.1524152
Appears in Collections:
엘텍공과대학 > 전자공학과 > Journal papers
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