Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이승준 | * |
dc.date.accessioned | 2016-08-28T11:08:11Z | - |
dc.date.available | 2016-08-28T11:08:11Z | - |
dc.date.issued | 2002 | * |
dc.identifier.issn | 0734-211X | * |
dc.identifier.other | OAK-1305 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/219131 | - |
dc.description.abstract | Several n-ZnO/p-Si photodiodes were fabricated using rf-sputter deposition with various Ar/O 2 ratios at 480°C. The I-V measurements performed under continuous illumination on the photodiodes exhibited that a high responsivity of 0.286 A/W could be obtained from the photodiode prepared at an appropriate Ar/O 2 ratio of 6:1. The same diode also showed the least dark current leakage while the diode prepared at the high O 2 partial pressure (Ar/O 2=2:1) revealed the largest. Temporal response was measured up to 35 ns from the best n-ZnO/p-Si diodes with the least current leakage and high responsivity in measurements at the high modulation frequency of 1.5 MHz. | * |
dc.language | English | * |
dc.title | Photoresponse characteristics of n-ZnO/p-Si heterojunction photodiodes | * |
dc.type | Article | * |
dc.relation.issue | 6 | * |
dc.relation.volume | 20 | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 2384 | * |
dc.relation.lastpage | 2387 | * |
dc.relation.journaltitle | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | * |
dc.identifier.doi | 10.1116/1.1524152 | * |
dc.identifier.wosid | WOS:000180307300035 | * |
dc.identifier.scopusid | 2-s2.0-0036883187 | * |
dc.author.google | Choi Y.S. | * |
dc.author.google | Lee J.Y. | * |
dc.author.google | Im S. | * |
dc.author.google | Lee S.J. | * |
dc.contributor.scopusid | 이승준(36064894500;57207064952) | * |
dc.date.modifydate | 20240322125312 | * |