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Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

Title
Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology
Authors
Park J.-S.Lee S.-Y.Shin H.Dutton R.W.
Ewha Authors
신형순
SCOPUS Author ID
신형순scopus
Issue Date
2002
Journal Title
Electronics Letters
ISSN
0013-5194JCR Link
Citation
vol. 38, no. 20, pp. 1222 - 1223
Indexed
SCI; SCIE; SCOPUS WOS scopus
Abstract
Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.
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엘텍공과대학 > 전자공학과 > Journal papers
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