Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

Abstract

Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.