DSpace at EWHA: Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology

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DC Field	Value	Language
dc.contributor.author	신형순	*
dc.date.accessioned	2016-08-28T11:08:06Z	-
dc.date.available	2016-08-28T11:08:06Z	-
dc.date.issued	2002	*
dc.identifier.issn	0013-5194	*
dc.identifier.other	OAK-1207	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/219072	-
dc.description.abstract	Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology.	*
dc.language	English	*
dc.title	Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology	*
dc.type	Article	*
dc.relation.issue	20	*
dc.relation.volume	38	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	1222	*
dc.relation.lastpage	1223	*
dc.relation.journaltitle	Electronics Letters	*
dc.identifier.wosid	WOS:000178714700046	*
dc.identifier.scopusid	2-s2.0-0037179908	*
dc.author.google	Park J.-S.	*
dc.author.google	Lee S.-Y.	*
dc.author.google	Shin H.	*
dc.author.google	Dutton R.W.	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.date.modifydate	20240322125227	*