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High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes

Title
High Performance of Low Band Gap Polymer-Based Ambipolar Transistor Using Single-Layer Graphene Electrodes
Authors
Choi, Jong YongKang, WoonggiKang, BoseokCha, WonsukSon, Seon KyoungYoon, YoungwoonKim, HyunjungKang, YoungjongKo, Min JaeSon, Hae JungCho, KilwonCho, Jeong HoKim, BongSoo
Ewha Authors
김봉수
SCOPUS Author ID
김봉수scopus
Issue Date
2015
Journal Title
ACS APPLIED MATERIALS & INTERFACES
ISSN
1944-8244JCR Link
Citation
vol. 7, no. 10, pp. 6002 - 6012
Keywords
ambipolar organic field-effect transistorsingle layer graphene electrodehigh carrier mobilitylow band gap polymerfilm crystallinity
Publisher
AMER CHEMICAL SOC
Indexed
SCI; SCIE; SCOPUS WOS
Abstract
Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-DaSed ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT :films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated With the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these "experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature.
DOI
10.1021/acsami.5b00747
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사범대학 > 과학교육과 > Journal papers
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