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Non-volatile organic memory with sub-millimetre bending radius

Title
Non-volatile organic memory with sub-millimetre bending radius
Authors
Kim, Richard HahnkeeKim, Hae JinBae, InsungHwang, Sun KakVelusamy, Dhinesh BabuCho, Suk ManTakaishi, KazutoMuto, TsuyoshiHashizume, DaisukeUchiyama, MasanobuAndre, PascalMathevet, FabriceHeinrich, BenoitAoyama, TetsuyaKim, Dae-EunLee, HyungsukRibierre, Jean-CharlesPark, Cheolmin
Ewha Authors
Jean Charles Ribierre
Issue Date
2014
Journal Title
NATURE COMMUNICATIONS
ISSN
2041-1723JCR Link
Citation
vol. 5
Publisher
NATURE PUBLISHING GROUP
Indexed
SCI; SCIE; SCOPUS WOS
Abstract
High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n- type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of > 6,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 mu m and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices.
DOI
10.1038/ncomms4583
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자연과학대학 > 물리학전공 > Journal papers
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