Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jean Charles Ribierre | - |
dc.date.accessioned | 2016-08-27T04:08:50Z | - |
dc.date.available | 2016-08-27T04:08:50Z | - |
dc.date.issued | 2014 | - |
dc.identifier.issn | 2041-1723 | - |
dc.identifier.other | OAK-11344 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/216842 | - |
dc.description.abstract | High-performance non-volatile memory that can operate under various mechanical deformations such as bending and folding is in great demand for the future smart wearable and foldable electronics. Here we demonstrate non-volatile solution-processed ferroelectric organic field-effect transistor memories operating in p- and n- type dual mode, with excellent mechanical flexibility. Our devices contain a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) thin insulator layer and use a quinoidal oligothiophene derivative (QQT(CN)4) as organic semiconductor. Our dual-mode field-effect devices are highly reliable with data retention and endurance of > 6,000 s and 100 cycles, respectively, even after 1,000 bending cycles at both extreme bending radii as low as 500 mu m and with sharp folding involving inelastic deformation of the device. Nano-indentation and nano scratch studies are performed to characterize the mechanical properties of organic layers and understand the crucial role played by QQT(CN)4 on the mechanical flexibility of our devices. | - |
dc.language | English | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Non-volatile organic memory with sub-millimetre bending radius | - |
dc.type | Article | - |
dc.relation.volume | 5 | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.journaltitle | NATURE COMMUNICATIONS | - |
dc.identifier.doi | 10.1038/ncomms4583 | - |
dc.identifier.wosid | WOS:000335220400001 | - |
dc.author.google | Kim, Richard Hahnkee | - |
dc.author.google | Kim, Hae Jin | - |
dc.author.google | Bae, Insung | - |
dc.author.google | Hwang, Sun Kak | - |
dc.author.google | Velusamy, Dhinesh Babu | - |
dc.author.google | Cho, Suk Man | - |
dc.author.google | Takaishi, Kazuto | - |
dc.author.google | Muto, Tsuyoshi | - |
dc.author.google | Hashizume, Daisuke | - |
dc.author.google | Uchiyama, Masanobu | - |
dc.author.google | Andre, Pascal | - |
dc.author.google | Mathevet, Fabrice | - |
dc.author.google | Heinrich, Benoit | - |
dc.author.google | Aoyama, Tetsuya | - |
dc.author.google | Kim, Dae-Eun | - |
dc.author.google | Lee, Hyungsuk | - |
dc.author.google | Ribierre, Jean-Charles | - |
dc.author.google | Park, Cheolmin | - |
dc.date.modifydate | 20180104081001 | - |