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비정질 반도체 As-Te-In계의 광유도 효과 및 광구조 변화

Title
비정질 반도체 As-Te-In계의 광유도 효과 및 광구조 변화
Other Titles
Photo-induced effect and structural change of Glassy Semiconductor As-Te-In-System
Authors
李美淑
Issue Date
1990
Department/Major
교육대학원 과학교육전공물리교육분야
Keywords
비정질반도체As-Te-In계광유도 효과광구조 변화
Publisher
이화여자대학교 교육대학원
Degree
Master
Advisors
이종록
Abstract
The photostructure of amorphous semiconductor AsTeIn, for which in concentration is 5.4, 11.1 at% is investigated. The thin film samples are prepared by the thermal evaporation method after made bulk films Samples. The thin films which are laser beam illuminated in room temperature (290K) and low temperature(97K), annealing about laser beam investigate films and deposited film, which are monochromatic light investigated. After experimentation, its measured with X-ray diffraction, absorption coefficient, band gap(Eg) energy and photograph SEM. After that we saw photo-structure of amorphous semiconductor. According to X-ray diffraction, we saw that reciprocity law was materialized which is coefficients only related times of investigated strength (I) and Investigated time(T) After laser beam investigated, the thin films with annealing were seen reversible change that absorption edge moved to long wave and then moved to short wave again by annealing. The absorption coefficients are increased and the band gap energies are decreased. We can see photodarkening from the experimental results. We reconized that experimentation provoked reversible change because phase seperation structure which was created after investigate of laser beam from the SEM, Which similiar structure of deposited film after annealing.;3성분계 비정질 반도체 As-Te-In계에서 In을 5.4, 11.1, at%의 비로 첨가하여 bulk시료를 만든 후 thermal evaporation 방법에 의해서 박막시료를 만들어 상온(290K)과 저온(97K)에서 Laser광 조사, Laser광 조사시료의 일부와 deposited film에 대한 열처리, monochromatic light 조사등의 실험 후 X-선 회절 광 흡수계수, 광학적 에너지 gap(Eg)을 측정하고 SEM사진을 찍어 광구조 및 비정질 반도체의 조직구조를 보았다. X-선 회절결과, 흡수계수는 광의 조사강도(I)와 조사시간(t)의 곱에만 관계한다는 reciprocity law가 일부 성립됨을 볼 수 있었다. Laser광 조사후 annealing시킨 시료는 홉수단이 장파장 쪽으로 이동하였다가 annealing에 의해 다시 단파장쪽으로 이동하는 가역변화을 보였으며, 광조사한 시료의 흡수계수는 증가하고 광학적 에너지 gap이 감소하는 광흑화 현상이 관찰 되었다. SEM사진으로 부터 Laser광 조사후, 나타난 분상구조가 annealing후 Deposited film구조와 비슷하게 되어 실험이 가역변화를 일으켰음을 알게 했다.
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