2019 | Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems | 박준희; 선우경 | Article |
2019 | Analysis of operation characteristics of junctionless poly-Si 1T-DRAM in accumulation mode | 신형순; 선우경 | Article |
2019 | Implementation of multi-layer neural network system for neuromorphic hardware architecture | 신형순; 선우경; 이정원 | Conference Paper |
2019 | Analysis of the Memristor-Based Crossbar Synapse for Neuromorphic Systems | 신형순; 선우경 | Article |
2019 | Memristor Neural Network Training with Clock Synchronous Neuromorphic System | 신형순; 박준희; 선우경 | Article |
2019 | Fabrication and Characterization of a Thin-Body Poly-Si 1T DRAM With Charge-Trap Effect | 신형순; 선우경 | Article |
2018 | New modeling method for the dielectric relaxation of a DRAM cell capacitor | 신형순; 선우경 | Article; Proceedings Paper |
2018 | Read margin analysis of crossbar arrays using the cell-variability-aware simulation method | 신형순; 선우경 | Article; Proceedings Paper |
2018 | Analysis of Read Margin and Write Power Consumption of a 3-D vertical RRAM (VRRAM) Crossbar Array | 신형순; 선우경 | Article |
2018 | Analysis of read margin of crossbar array according to selector and resistor variation | 신형순; 선우경 | Conference Paper |