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An Optoelectronic CMOS Transimpedance Amplifier Using an FVF-Based Low-Dropout Regulator for PSRR Enhancement

Title
An Optoelectronic CMOS Transimpedance Amplifier Using an FVF-Based Low-Dropout Regulator for PSRR Enhancement
Authors
Cho, Suwon; Choi, Sieun; Park, Sung-Min
Ewha Authors
박성민
SCOPUS Author ID
박성민scopus
Issue Date
2026
Journal Title
ELECTRONICS
ISSN
2079-9292JCR Link
Citation
ELECTRONICS vol. 15, no. 9
Keywords
BGR; CMOS; LDO; optoelectronic; PSRR; TIA
Publisher
MDPI
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
This paper presents a flipped-voltage-follower low-dropout regulator (FVF-LDO) for power supply rejection enhancement and low-power operation in CMOS transimpedance amplifiers for optical receiver applications. The proposed FVF-LDO ensures high stability and reliable regulation over a wide range of load conditions by employing a flipped-voltage follower for fast local feedback and improved power supply rejection, while a super-source follower enhances the transient response through increased current-driving capability. A bandgap reference with a 3-bit trimming DAC is adopted to compensate process variations and support stable LDO operations, achieving a temperature coefficient of 19.6 ppm/degrees C over a wide range of -25 degrees C to 125 degrees C. The FVF-LDO exhibits a 101 mV undershoot under a 100 & micro;A-to-10 mA load step with a 100 ns edge time. When applied to an optoelectronic inverter-based active-feedback transimpedance amplifier (TIA), the regulated supply improves the power supply rejection ratio (PSRR) from -6 dB to -38.3 dB. The proposed optoelectronic TIA realized in a 180 nm CMOS process achieves 67 dB Omega transimpedance gain, 869 MHz bandwidth, 66 dB dynamic range, 6.68 pA/root Hz input-referred noise current spectral density, and 4.68 mW power consumption from a single 1.8 V supply. The proposed TIA chip occupies a core area of 940 & times; 162 & micro;m(2).
DOI
10.3390/electronics15091771
Appears in Collections:
공과대학 > 전자전기공학전공 > Journal papers
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