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Artificial Room-Temperature Ferromagnetism of Bulk van der Waals VSe2

Title
Artificial Room-Temperature Ferromagnetism of Bulk van der Waals VSe2
Authors
Lee J.; Kim G.; Seok H.; Choi H.; Lee H.; Lee S.; Kim H.; Son S.
Ewha Authors
Andreas Heinrich
SCOPUS Author ID
Andreas Heinrichscopus
Issue Date
2025
Journal Title
Advanced Science
ISSN
2198-3844JCR Link
Citation
Advanced Science vol. 12, no. 34
Keywords
Ferromagnetic; Magnetic Force Microscopy; Nano-crystallization; Van Der Waals Materials; Vanadium Selenide; Vanadium; Exfoliation (materials Science); High Resolution Transmission Electron Microscopy; Magnetization Reversal; Nanocomposites; Nanocrystalline Materials; Nanocrystals; Ferromagnetics; Ferromagnets; Fundamental Physics; Magnetic-force Microscopy; Nano Crystallization; Orbital Motions; Selenides; Spin Motion; Van Der Waal; Van Der Waal Material; Van Der Waals Forces; Ferromagnetic Material; Selenide; Article; Controlled Study; Crystallization; Diffraction; Energy Dispersive X Ray Spectroscopy; High Temperature; Information Storage; Low Temperature; Magnetic Field; Magnetism; Nonhuman; Pharmaceutics; Room Temperature; Synthesis; Transmission Electron Microscopy; X Ray Photoemission Spectroscopy
Publisher
John Wiley and Sons Inc
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
Originating from spin and orbital motion, van der Waals (vdW) ferromagnetism has emerged as a significant platform to experimentally access the fundamental physics of magnetism in reduced dimensions, including quantum computing, sensing, and data storage. However, currently, available vdW ferromagnetic materials can be achieved with mechanical exfoliation and low-temperature operation, which completely limits the monolithic integration of vdW ferromagnets with other functional materials. Nonetheless, the direct synthesis of room-temperature vdW ferromagnets has not been achieved commercially, owing to the imprecise control of the layer-by-layer growth, high-temperature synthesis, and low yield. To overcome these limitations, herein, an artificial vdW ferromagnetic platform has been reported, which activates the nano-crystallization and its corresponding ferromagnetism in bulk VSe<inf>2</inf> via Ar + H<inf>2</inf>S plasma sulfurization. Sweeping the magnetic field, vdW ferromagnetism has been spatially resolved, which experimentally correlates with magnetization reversal behavior and domain pinning effects. Furthermore, nano-crystallization of VSe<inf>2</inf> is clearly validated with transmission electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and selected area diffraction analysis. In conclusion, it is envisioned that the artificial vdW ferromagnetic platform can artificially inject the ferromagnetism in bulk vdW VSe<inf>2</inf>, which has not been possible previously. © 2025 Elsevier B.V., All rights reserved.
DOI
10.1002/advs.202504746
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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