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The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfOx/W Bilayer-Structured Memory Device

Title
The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfOx/W Bilayer-Structured Memory Device
Authors
NohMinseoJuDongyeolChoSeongjaeKimSungjun
Ewha Authors
조성재
SCOPUS Author ID
조성재scopus
Issue Date
2023
Journal Title
Nanomaterials
ISSN
2079-4991JCR Link
Citation
Nanomaterials vol. 13, no. 21
Keywords
neuromorphic systemresistive switchingspike-timing-dependent plasticityZnO
Publisher
Multidisciplinary Digital Publishing Institute (MDPI)
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
This study discusses the potential application of ITO/ZnO/HfOx/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>102) and stable retention (>104 s). Notably, the formation and rupture of filaments at the interface of ZnO and HfOx contribute to a higher ON/OFF ratio and improve cycle uniformity compared to RRAM devices without the HfOx layer. Additionally, the linearity of potentiation and depression responses validates their applicability in neural network pattern recognition, and spike-timing-dependent plasticity (STDP) behavior is observed. These findings collectively suggest that the ITO/ZnO/HfOx/W structure holds the potential to be a viable memory component for integration into neuromorphic systems. © 2023 by the authors.
DOI
10.3390/nano13212856
Appears in Collections:
공과대학 > 전자전기공학전공 > Journal papers
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