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Imperfections are not 0 K: free energy of point defects in crystals

Title
Imperfections are not 0 K: free energy of point defects in crystals
Authors
Mosquera-Lois I.Kavanagh S.R.Klarbring J.Tolborg K.Walsh A.
Ewha Authors
Aron Walsh
SCOPUS Author ID
Aron Walshscopus
Issue Date
2023
Journal Title
Chemical Society Reviews
ISSN
3060-0012JCR Link
Citation
Chemical Society Reviews vol. 52, no. 17, pp. 5812 - 5826
Publisher
Royal Society of Chemistry
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Review
Abstract
Defects determine many important properties and applications of materials, ranging from doping in semiconductors, to conductivity in mixed ionic-electronic conductors used in batteries, to active sites in catalysts. The theoretical description of defect formation in crystals has evolved substantially over the past century. Advances in supercomputing hardware, and the integration of new computational techniques such as machine learning, provide an opportunity to model longer length and time-scales than previously possible. In this Tutorial Review, we cover the description of free energies for defect formation at finite temperatures, including configurational (structural, electronic, spin) and vibrational terms. We discuss challenges in accounting for metastable defect configurations, progress such as machine learning force fields and thermodynamic integration to directly access entropic contributions, and bottlenecks in going beyond the dilute limit of defect formation. Such developments are necessary to support a new era of accurate defect predictions in computational materials chemistry. © 2023 The Royal Society of Chemistry.
DOI
10.1039/d3cs00432e
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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