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An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors
- Title
- An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors
- Authors
- Hu, Yu; Joo, Ji-Eun; Lee, Myung-Jae; Park, Sung Min
- Ewha Authors
- 박성민
- SCOPUS Author ID
- 박성민
- Issue Date
- 2022
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- ISSN
- 1598-1657
2233-4866
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE vol. 22, no. 4, pp. 275 - 281
- Keywords
- CMOS; cross-coupled; feedforward; optoelectronic; TIA
- Publisher
- IEEK PUBLICATION CENTER
- Indexed
- SCIE; SCOPUS; KCI
- Document Type
- Article
- Abstract
- This paper presents an optoelectronic transimpedance amplifier (OTIA) implemented in a 180-nm CMOS technology, in which a P+/N-well avalanche photodiode (APD) is realized on-chip to reduce signal distortions occurring from bond-wire and I/O pad at the input node, a voltage-mode feedforward input configuration is exploited to boost the transimpedance gain, and a cross-coupled inverter-based post-amplifier (CI-PA) is added to reduce the mismatches from the previous stage. The proposed OTIA demonstrate 95.1-dBO transimpedance gain, 608-MHz bandwidth, 4.54pA/vHz noise current spectral density, 26.4- dB dynamic range that corresponds to the input currents of 2.38 mu App similar to 50 mu App, and 39.3-mW power dissipation from a single 1.8-V supply. The chip core occupies the area of 0.068 mm2.
- DOI
- 10.5573/JSTS.2022.22.4.275
- Appears in Collections:
- 공과대학 > 전자전기공학전공 > Journal papers
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