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Enhanced optical absorption in conformally grown MoS2 layers on SiO2/Si substrates with SiO2 nanopillars with a height of 50 nm

Title
Enhanced optical absorption in conformally grown MoS2 layers on SiO2/Si substrates with SiO2 nanopillars with a height of 50 nm
Authors
Choi, HyejiKim, EunahKwon, SoyeongKim, JayeongAnh Duc NguyenLee, Seong-YeonKo, EunjiBaek, SuyeunPark, Hyeong-HoPark, Yun ChangYee, Ki-JuYoon, SeokhyunKim, Yong SooKim, Dong-Wook
Ewha Authors
윤석현김동욱
SCOPUS Author ID
윤석현scopus; 김동욱scopus
Issue Date
2021
Journal Title
NANOSCALE ADVANCES
ISSN
2516-0230JCR Link
Citation
NANOSCALE ADVANCES vol. 3, no. 3, pp. 710 - 715
Publisher
ROYAL SOC CHEMISTRY
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
The integration of transition metal dichalcogenide (TMDC) layers on nanostructures has attracted growing attention as a means to improve the physical properties of the ultrathin TMDC materials. In this work, the influence of SiO2 nanopillars (NPs) with a height of 50 nm on the optical characteristics of MoS2 layers is investigated. Using a metal organic chemical vapor deposition technique, a few layers of MoS2 were conformally grown on the NP-patterned SiO2/Si substrates without notable strain. The photoluminescence and Raman intensities of the MoS2 layers on the SiO2 NPs were larger than those observed from a flat SiO2 surface. For 100 nm-SiO2/Si wafers, the 50 nm-NP patterning enabled improved absorption in the MoS2 layers over the whole visible wavelength range. Optical simulations showed that a strong electric-field could be formed at the NP surface, which led to the enhanced absorption in the MoS2 layers. These results suggest a versatile strategy to realize high-efficiency TMDC-based optoelectronic devices.
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DOI
10.1039/d0na00905a
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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