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Internal Fields in Multilayer WS2/MoS2 Heterostructures Epitaxially Grown on Sapphire Substrates

Title
Internal Fields in Multilayer WS2/MoS2 Heterostructures Epitaxially Grown on Sapphire Substrates
Authors
Kim, BoraKim, JayeongTsai, Po-ChengKwon, SoyeongKim, EunahYoon, SeokhyunLin, Shih-YenKim, Dong-Wook
Ewha Authors
윤석현김동욱
SCOPUS Author ID
윤석현scopus; 김동욱scopus
Issue Date
2020
Journal Title
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
ISSN
1862-6300JCR Link

1862-6319JCR Link
Citation
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE vol. 217, no. 10
Keywords
heterostructuresinternal fieldKelvin probe force microscopyMoS2WS2
Publisher
WILEY-V C H VERLAG GMBH
Indexed
SCIE; SCOPUS WOS
Document Type
Article
Abstract
In conventional 3D heterostructures, a gradual potential gradient in constituent layers and an abrupt potential discontinuity at heterointerfaces can appear. Studies of the electrostatic potential in 2D heterostructures require careful characterizations and analyses because the 2D materials have distinct physical characteristics compared with their 3D counterparts. Herein, three kinds of samples are prepared using sulfurization of metal layers on single-crystalline sapphire substrates: WS2, MoS2, and WS2/MoS2. The surface potential (V-S) of the samples is measured using Kelvin probe force microscopy. The light-induced V-S change in the stand-alone trilayer (3L-) WS2 (-63 mV) is much more notable than that in the 3L-WS2/3L-MoS2 heterostructure (-12 mV). In contrast, the light-induced V-S change in the stand-alone 3L-MoS2 is positive and very large (approximate to 200 mV). To explain these results, the potential and internal field distributions are proposed for both the stand-alone (WS2 and MoS2) and heterostructure (WS2/MoS2) samples. The polarity and magnitude of the internal field depend on the electronic interaction and screening from neighboring 2D layers and underlying substrates. Relative peak shifts of the Raman spectra of the samples are obtained and discussed, with consideration of the internal field effects.
DOI
10.1002/pssa.202000033
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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