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dc.contributor.author조윌렴*
dc.contributor.author윤석현*
dc.date.accessioned2020-04-13T16:32:14Z-
dc.date.available2020-04-13T16:32:14Z-
dc.date.issued2020*
dc.identifier.issn2050-7526*
dc.identifier.issn2050-7534*
dc.identifier.otherOAK-26801*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/253812-
dc.description.abstractThe interplay between free and bound charges in two-dimensional (2D) semiconductor/ferroelectric oxide structures is responsible for the unique opto-electrical properties of these structures. In this study, we vertically combined the 2D layered semiconductors MoS2 (n-type) and WSe2 (p-type) with a ferroelectric oxide (PbTiO3) and found that a ferroelectric polarization induced accumulation or depletion in the layered materials. The heterostructures exhibited polarization-dependent charge distribution and pinched hysteresis. We show that polarization at the interface promoted efficient charge separation of photo-generated carriers in the 2D layers. Optical control of electrical transport was effectively achieved in the MoS2 layers. This study potentially opens up new applications for semiconductor/ferroelectric systems in electronic devices.*
dc.languageEnglish*
dc.publisherROYAL SOC CHEMISTRY*
dc.titlePhoto-response in 2D metal chalcogenide-ferroelectric oxide heterostructure controlled by spontaneous polarization*
dc.typeArticle*
dc.relation.issue11*
dc.relation.volume8*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage3724*
dc.relation.lastpage3729*
dc.relation.journaltitleJOURNAL OF MATERIALS CHEMISTRY C*
dc.identifier.doi10.1039/c9tc05621a*
dc.identifier.wosidWOS:000528591300010*
dc.identifier.scopusid2-s2.0-85082386350*
dc.author.googleJin, Hye-Jin*
dc.author.googleKim, Jayeong*
dc.author.googleKim, Yejin*
dc.author.googleYoon, Seokhyun*
dc.author.googleLee, Yangjin*
dc.author.googleKim, Kwanpyo*
dc.author.googleJo, William*
dc.contributor.scopusid조윌렴(7103322276)*
dc.contributor.scopusid윤석현(55732105900)*
dc.date.modifydate20240123091004*
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자연과학대학 > 물리학전공 > Journal papers
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