View : 755 Download: 0
A switchable dual-mode fully-differential common-source low-noise amplifier in 0.18-mu m CMOS technology
- Title
- A switchable dual-mode fully-differential common-source low-noise amplifier in 0.18-mu m CMOS technology
- Authors
- Zhang, Changchun; Wang, Yongkai; Gao, Shenjun; Tang, Lu; Zhang, Yi; Park, Sung Min
- Ewha Authors
- 박성민
- SCOPUS Author ID
- 박성민
- Issue Date
- 2020
- Journal Title
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
- ISSN
- 0895-2477
1098-2760
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS vol. 62, no. 3, pp. 1163 - 1168
- Keywords
- dual-mode; high gain; high linearity; LNA; UHF RFID
- Publisher
- WILEY
- Indexed
- SCIE; SCOPUS
- Document Type
- Article
- Abstract
- A highly-integrated switchable dual-mode low-noise amplifier (LNA) is proposed and implemented in standard 0.18 mu m complementary metal-oxide-semiconductor (CMOS) technology for ultra-high frequency-radio-frequency identification (UHF RFID) reader receivers. This dual-mode LNA can be controlled to operate in two different modes in order to meet the requirements for the listen-before-talk mode and the normal mode of the UHF RFID reader receiver, respectively. The fully-differential common-source cascode topology with perfect input impedance matching, capacitive cross-coupling, and common-mode feedback techniques are employed to improve its performance. Measurement results show that, from a single power supply of 1.8 V, the LNA achieved the power gain (S21) of 9.1 dB, the input power reflection (S11) of -20 dB, the minimum noise figure (NF) of 3.6 dB, and the P-1dB of -5 dBm in high-gain mode. In high-linearity mode, S21 of 3.2 dB, S11 of -17 dB, NF of 5.2 dB, and P1dB of -1.3 dBm were obtained.
- DOI
- 10.1002/mop.32169
- Appears in Collections:
- 공과대학 > 전자전기공학전공 > Journal papers
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML