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Ultimate limit in size and performance of WSe2 vertical diodes
- Title
- Ultimate limit in size and performance of WSe2 vertical diodes
- Authors
- Nazir, Ghazanfar; Kim, Hakseong; Kim, Jihwan; Kim, Kyoung Soo; Shin, Dong Hoon; Khan, Muhammad Farooq; Lee, Dong Su; Hwang, Jun Yeon; Hwang, Chanyong; Suh, Junho; Eom, Jonghwa; Jung, Suyong
- Ewha Authors
- 신동훈
- SCOPUS Author ID
- 신동훈
- Issue Date
- 2018
- Journal Title
- NATURE COMMUNICATIONS
- ISSN
- 2041-1723
- Citation
- NATURE COMMUNICATIONS vol. 9
- Publisher
- NATURE PUBLISHING GROUP
- Indexed
- SCIE; SCOPUS
- Document Type
- Article
- Abstract
- Precise doping-profile engineering in van der Waals heterostructures is a key element to promote optimal device performance in various electrical and optical applications with twodimensional layered materials. Here, we report tungsten diselenide-(WSe2) based pure vertical diodes with atomically defined p-, i- and n-channel regions. Externally modulated p-and n-doped layers are respectively formed on the bottom and the top facets of WSe2 single crystals by direct evaporations of high and low work-function metals platinum and gadolinium, thus forming atomically sharp p-i-n heterojunctions in the homogeneous WSe2 layers. As the number of layers increases, charge transport through the vertical WSe2 p-i-n heterojunctions is characterized by a series of quantum tunneling events; direct tunneling, Fowler-Nordheim tunneling, and Schottky emission tunneling. With optimally selected WSe2 thickness, our vertical heterojunctions show superb diode characteristics of an unprecedentedly high current density and low turn-on voltages while maintaining good current rectification.
- DOI
- 10.1038/s41467-018-07820-8
- Appears in Collections:
- 자연과학대학 > 물리학전공 > Journal papers
- Files in This Item:
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