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Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering

Title
Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering
Authors
Park G.S.Chu V.B.Kim B.W.Kim D.-W.Oh H.-S.Hwang Y.J.Min B.K.
Ewha Authors
김동욱
SCOPUS Author ID
김동욱scopus
Issue Date
2018
Journal Title
ACS Applied Materials and Interfaces
ISSN
1944-8244JCR Link
Citation
ACS Applied Materials and Interfaces vol. 10, no. 12, pp. 9894 - 9899
Publisher
American Chemical Society
Indexed
SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis. © 2018 American Chemical Society.
DOI
10.1021/acsami.8b00526
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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