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dc.contributor.author박성민*
dc.date.accessioned2018-11-21T16:30:19Z-
dc.date.available2018-11-21T16:30:19Z-
dc.date.issued2018*
dc.identifier.issn0026-2692*
dc.identifier.issn1879-2391*
dc.identifier.otherOAK-23016*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/246710-
dc.description.abstractThis paper presents a novel CMOS voltage reference circuit named symmetric self-biased voltage reference (SSVR), which enables not only to discard the voltage headroom issue of a conventional constant-g(m) current source and the inevitable need of an extra bias in a modified constant-g(m), current source, but also to maintain stable bias voltages with strong tolerance against significant variations of power supply and temperature. Test chips of the SSVR were implemented by using a 0.11-mu m CMOS process. Measured results demonstrate that the symmetric configuration of the proposed SSVR helps to achieve constant voltage references against the V-DD variation from 0.7 to 1.2V and the temperature variation from -15 degrees C to 125 degrees C. The fabricated chip consumes constant 18.5 mu A currents for 0.7 similar to 1.0-V supply voltages and its core occupies the area of 0.04 x 0.047 mm(2).*
dc.languageEnglish*
dc.publisherELSEVIER SCI LTD*
dc.subjectCMOS*
dc.subjectConstant-g(m)*
dc.subjectModified cascode*
dc.subjectPVT variation*
dc.subjectSelf-biased*
dc.subjectVoltage reference*
dc.titleA CMOS symmetric self-biased voltage reference*
dc.typeArticle*
dc.relation.volume80*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage28*
dc.relation.lastpage33*
dc.relation.journaltitleMICROELECTRONICS JOURNAL*
dc.identifier.doi10.1016/j.mejo.2018.08.002*
dc.identifier.wosidWOS:000446412100004*
dc.identifier.scopusid2-s2.0-85052287881*
dc.author.googlePark, Minseon*
dc.author.googlePark, Sung Min*
dc.contributor.scopusid박성민(7501832231)*
dc.date.modifydate20240322125443*
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공과대학 > 전자전기공학전공 > Journal papers
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