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자연과학대학
물리학전공
Journal papers
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First-principles modeling of resistance switching in perovskite oxide material
Title
First-principles modeling of resistance switching in perovskite oxide material
Authors
Jeon S.H.
;
Park B.H.
;
Lee J.
;
Lee B.
;
Han S.
Ewha Authors
한승우
SCOPUS Author ID
한승우
Issue Date
2006
Journal Title
Applied Physics Letters
ISSN
0003-6951
Citation
Applied Physics Letters vol. 89, no. 4
Indexed
SCI; SCIE; SCOPUS
Document Type
Article
Abstract
We report a first-principles study on SrRuO3/SrTiO3 interface in the presence of the oxygen vacancy. While the oxygen vacancy on the side of SrTiO3 significantly lowers the Schottky barrier height, the oxygen vacancy close to the interface or inside the metallic electrode results in a Schottky barrier comparable to that of the clean interface. Based on these results, we propose a model for resistance-switching phenomena in perovskite oxide/metal interfaces where electromigration of the oxygen vacancy plays a key role. Our model provides a consistent explanation of a recent experiment on resistance switching in SrRuO3/Nb:SrTiO3 interface. © 2006 American Institute of Physics.
DOI
10.1063/1.2234840
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