Full metadata record
DC Field | Value | Language |
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dc.contributor.author | 김봉수 | - |
dc.date.accessioned | 2018-01-11T16:30:31Z | - |
dc.date.available | 2018-01-11T16:30:31Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.other | OAK-21635 | - |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/239680 | - |
dc.description.abstract | We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10(7). The highest hole mobility of 1.51 cm(2) V-1 s(-1) and the highest electron mobility of 0.85 cm(2) V-1 s(-1) were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.subject | flexible field-effect transistors | - |
dc.subject | structure-property relationship | - |
dc.subject | organic semiconductors | - |
dc.subject | carrier mobility | - |
dc.subject | mechanical stability | - |
dc.title | Structure-Property Relationships of Semiconducting Polymers for Flexible and Durable Polymer Field-Effect Transistors | - |
dc.type | Article | - |
dc.relation.issue | 46 | - |
dc.relation.volume | 9 | - |
dc.relation.index | SCIE | - |
dc.relation.index | SCOPUS | - |
dc.relation.startpage | 40503 | - |
dc.relation.lastpage | 40515 | - |
dc.relation.journaltitle | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.7b12435 | - |
dc.identifier.wosid | WOS:000416614600071 | - |
dc.identifier.scopusid | 2-s2.0-85035075686 | - |
dc.author.google | Kim, Min Je | - |
dc.author.google | Jung, A-Ra | - |
dc.author.google | Lee, Myeongjae | - |
dc.author.google | Kim, Dongjin | - |
dc.author.google | Ro, Suhee | - |
dc.author.google | Jin, Seon-Mi | - |
dc.author.google | Hieu Dinh Nguyen | - |
dc.author.google | Yang, Jeehye | - |
dc.author.google | Lee, Kyung-Koo | - |
dc.author.google | Lee, Eunji | - |
dc.author.google | Kang, Moon Sung | - |
dc.author.google | Kim, Hyunjung | - |
dc.author.google | Cho, Jong-Ho | - |
dc.author.google | Kim, BongSoo | - |
dc.author.google | Cho, Jeong Ho | - |
dc.contributor.scopusid | 김봉수(55588476300) | - |
dc.date.modifydate | 20210915140021 | - |