DSpace at EWHA: A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films

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DC Field	Value	Language
dc.contributor.author	김태희	*
dc.date.accessioned	2017-02-15T08:02:27Z	-
dc.date.available	2017-02-15T08:02:27Z	-
dc.date.issued	2007	*
dc.identifier.issn	0304-8853	*
dc.identifier.other	OAK-4096	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/234378	-
dc.description.abstract	Mn-doped ZnO films (for Mn at% ∼4%) were implanted using 30 keV H+ ions with a dose of 6.9×1016 cm-2 and subsequently annealed at 300 °C to study the effect of magnetism on the interstitial hydrogen in n-type II-VI magnetic semiconductors by using secondary ion mass spectroscopy (SIMS), Hall measurement and SQUID. We observed that the interstitial hydrogen leads to the changes in the magnetic hysteresis loop as well as the enhancement of carrier concentrations in the Mn-doped ZnO film. © 2006 Elsevier B.V. All rights reserved.	*
dc.language	English	*
dc.title	A study on the magnetic properties of hydrogen-implanted Zn0.96Mn0.04O films	*
dc.type	Article	*
dc.relation.issue	2 SUPPL. PART 3	*
dc.relation.volume	310	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	e708	*
dc.relation.lastpage	e710	*
dc.relation.journaltitle	Journal of Magnetism and Magnetic Materials	*
dc.identifier.doi	10.1016/j.jmmm.2006.10.1022	*
dc.identifier.wosid	WOS:000247720400365	*
dc.identifier.scopusid	2-s2.0-33847681452	*
dc.author.google	Park S.Y.	*
dc.author.google	Shin S.W.	*
dc.author.google	Kim P.J.	*
dc.author.google	Kang J.-H.	*
dc.author.google	Kim T.H.	*
dc.author.google	Lee Y.P.	*
dc.contributor.scopusid	김태희(57212232131)	*
dc.date.modifydate	20240422115658	*