Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes

Abstract

The influence of electron injection on the electric-pulse-induced resistive switching of PtTi O2 thin film/Pt structure was studied by current-voltage (I-V) measurements. The electron injection was increased by annealing the sample in a N2 atmosphere or measuring the I-V characteristics at high temperatures (<100 °C). The switching from the high-resistance state (HRS) to the low-resistance state by a filamentary mechanism was suppressed when the carrier injection by Schottky emission or space-charge-limited conduction (SCLC) was excessive. Interfacial potential barrier played a crucial role in determining the carrier injection. Switching was observed (not observed) when the HRS resistance was low (high) although SCLC was observed. © 2006 American Institute of Physics.