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dc.contributor.author조윌렴*
dc.date.accessioned2017-01-18T02:01:32Z-
dc.date.available2017-01-18T02:01:32Z-
dc.date.issued2007*
dc.identifier.issn0921-4534*
dc.identifier.otherOAK-4357*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/233982-
dc.description.abstractSrRuO3 thin films have been grown in situ on single crystal LaAlO3 substrates and textured metal templates which contain an MgO layer produced by an ion-beam growth method. Deposition was made of oxygen partial pressure in a range from 50 m Torr to 250 m Torr with laser repetition rate of 5 Hz. Substrate temperature was between 600 °C and 800 °C. Dependence of out-of-plane and in-plane orientation of SrRuO3 thin films on pressure and growth temperature was investigated by X-ray diffraction. The surface morphology and grain growth behaviors of SrRuO3 thin films were analyzed by atomic force microscopy and scanning electron microscopy. In addition, the transverse magnetoresistance value in a field of 4 and 8 T was measured in temperature range of 50-200 K and the ferromagnetic transition at ∼140 K of SrRuO3 films on LaAlO3 was detected by resistivity measurement. © 2007 Elsevier B.V. All rights reserved.*
dc.languageEnglish*
dc.titleStructural and electrical properties of SrRuO3 thin films for buffer layers of coated conductors*
dc.typeArticle*
dc.relation.issueSUPPL.*
dc.relation.volume463-465*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage584*
dc.relation.lastpage588*
dc.relation.journaltitlePhysica C: Superconductivity and its Applications*
dc.identifier.doi10.1016/j.physc.2007.05.024*
dc.identifier.wosidWOS:000250396000138*
dc.identifier.scopusid2-s2.0-34548442967*
dc.author.googleChoi M.R.*
dc.author.googleJo W.*
dc.author.googleOh Y.S.*
dc.author.googleKim K.H.*
dc.author.googleKang Y.-M.*
dc.author.googleYoo S.I.*
dc.author.googleMoon S.H.*
dc.author.googleHa H.S.*
dc.author.googleOh S.S.*
dc.contributor.scopusid조윌렴(7103322276)*
dc.date.modifydate20260114160350*
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자연과학대학 > 물리학전공 > Journal papers
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