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dc.contributor.author한승우-
dc.date.accessioned2016-08-28T11:08:21Z-
dc.date.available2016-08-28T11:08:21Z-
dc.date.issued2004-
dc.identifier.issn0163-1829-
dc.identifier.otherOAK-12750-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/228828-
dc.description.abstractWe study diffusion of self-interstitial atoms (SIAs) in vanadium via molecular-dynamics simulations. The 〈111〉-split interstitials are observed to diffuse one-dimensionally at low temperature, but rotate into other 〈111〉 directions as the temperature is increased. The SIA diffusion is highly non-Arrhenius. At T < 600 K, this behavior arises from temperature-dependent correlations. At T > 600 K, the Arrhenius expression for thermally activated diffusion breaks down when the migration barriers become small compared to the thermal energy. This leads to Arrhenius diffusion kinetics at low T and diffusivity proportional to temperature at high T.-
dc.languageEnglish-
dc.titleStrongly non-Arrhenius self-interstitial diffusion in vanadium-
dc.typeArticle-
dc.relation.issue6-
dc.relation.volume70-
dc.relation.indexSCOPUS-
dc.relation.startpage60102-
dc.relation.lastpage1-060102-4-
dc.relation.journaltitlePhysical Review B - Condensed Matter and Materials Physics-
dc.identifier.doi10.1103/PhysRevB.70.060102-
dc.identifier.scopusid2-s2.0-19544363218-
dc.author.googleZepeda-Ruiz L.A.-
dc.author.googleRottler J.-
dc.author.googleHan S.-
dc.author.googleAckland G.J.-
dc.author.googleCar R.-
dc.author.googleSrolovitz D.J.-
dc.contributor.scopusid한승우(55557541900)-
dc.date.modifydate20211210152321-


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