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dc.contributor.author신형순*
dc.date.accessioned2016-08-28T11:08:35Z-
dc.date.available2016-08-28T11:08:35Z-
dc.date.issued1999*
dc.identifier.issn0018-9383*
dc.identifier.otherOAK-12527*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/228654-
dc.description.abstractAlpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics.*
dc.languageEnglish*
dc.publisherIEEE, Piscataway, NJ, United States*
dc.titleModeling of alpha-particle-induced soft error rate in DRAM*
dc.typeArticle*
dc.relation.issue9*
dc.relation.volume46*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.startpage1850*
dc.relation.lastpage1857*
dc.relation.journaltitleIEEE Transactions on Electron Devices*
dc.identifier.doi10.1109/16.784184*
dc.identifier.wosidWOS:000082242500006*
dc.identifier.scopusid2-s2.0-0032595356*
dc.author.googleShin H.*
dc.contributor.scopusid신형순(7404012125)*
dc.date.modifydate20240322125227*
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공과대학 > 전자전기공학전공 > Journal papers
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