Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.date.accessioned | 2016-08-28T11:08:35Z | - |
dc.date.available | 2016-08-28T11:08:35Z | - |
dc.date.issued | 1999 | * |
dc.identifier.issn | 0018-9383 | * |
dc.identifier.other | OAK-12527 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/228654 | - |
dc.description.abstract | Alpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics. | * |
dc.language | English | * |
dc.publisher | IEEE, Piscataway, NJ, United States | * |
dc.title | Modeling of alpha-particle-induced soft error rate in DRAM | * |
dc.type | Article | * |
dc.relation.issue | 9 | * |
dc.relation.volume | 46 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 1850 | * |
dc.relation.lastpage | 1857 | * |
dc.relation.journaltitle | IEEE Transactions on Electron Devices | * |
dc.identifier.doi | 10.1109/16.784184 | * |
dc.identifier.wosid | WOS:000082242500006 | * |
dc.identifier.scopusid | 2-s2.0-0032595356 | * |
dc.author.google | Shin H. | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.date.modifydate | 20240322125227 | * |