DSpace at EWHA: Modeling of alpha-particle-induced soft error rate in DRAM

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DC Field	Value	Language
dc.contributor.author	신형순	*
dc.date.accessioned	2016-08-28T11:08:35Z	-
dc.date.available	2016-08-28T11:08:35Z	-
dc.date.issued	1999	*
dc.identifier.issn	0018-9383	*
dc.identifier.other	OAK-12527	*
dc.identifier.uri	https://dspace.ewha.ac.kr/handle/2015.oak/228654	-
dc.description.abstract	Alpha-particle-induced soft error in 256M DRAM was numerically investigated. A unified model for alpha-particle-induced charge collection and a soft-error-rate simulator (SERS) was developed. We investigated the soft error rate of 256M DRAM and identified the bit-bar mode as one of dominant modes for soft error. In addition, for the first time, it was found that trench-oxide depth has a significant influence on soft error rate, and it should be determined by the tradeoff between soft error rate and cell-to-cell isolation characteristics.	*
dc.language	English	*
dc.publisher	IEEE, Piscataway, NJ, United States	*
dc.title	Modeling of alpha-particle-induced soft error rate in DRAM	*
dc.type	Article	*
dc.relation.issue	9	*
dc.relation.volume	46	*
dc.relation.index	SCI	*
dc.relation.index	SCIE	*
dc.relation.index	SCOPUS	*
dc.relation.startpage	1850	*
dc.relation.lastpage	1857	*
dc.relation.journaltitle	IEEE Transactions on Electron Devices	*
dc.identifier.doi	10.1109/16.784184	*
dc.identifier.wosid	WOS:000082242500006	*
dc.identifier.scopusid	2-s2.0-0032595356	*
dc.author.google	Shin H.	*
dc.contributor.scopusid	신형순(7404012125)	*
dc.date.modifydate	20240322125227	*