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dc.contributor.author김동욱*
dc.date.accessioned2016-08-28T11:08:33Z-
dc.date.available2016-08-28T11:08:33Z-
dc.date.issued2014*
dc.identifier.issn1567-1739*
dc.identifier.otherOAK-10951*
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/227457-
dc.description.abstractInAs; Quantum dots; Solar cell; Trap states*
dc.languageEnglish*
dc.titleInfluence of InAs quantum dots on the transport properties of GaAs-based solar cell devices*
dc.typeArticle*
dc.relation.issue2*
dc.relation.volume14*
dc.relation.indexSCI*
dc.relation.indexSCIE*
dc.relation.indexSCOPUS*
dc.relation.indexKCI*
dc.relation.startpage192*
dc.relation.lastpage195*
dc.relation.journaltitleCurrent Applied Physics*
dc.identifier.doi10.1016/j.cap.2013.11.003*
dc.identifier.wosidWOS:000329966700009*
dc.identifier.scopusid2-s2.0-84888995496*
dc.author.googleKim H.*
dc.author.googlePark M.H.*
dc.author.googlePark S.J.*
dc.author.googleKim H.-S.*
dc.author.googleSong J.D.*
dc.author.googleKim S.-H.*
dc.author.googleChoi W.J.*
dc.author.googleKim D.-W.*
dc.contributor.scopusid김동욱(57203350633)*
dc.date.modifydate20240123114549*
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자연과학대학 > 물리학전공 > Journal papers
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