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dc.contributor.author김동욱-
dc.date.accessioned2016-08-28T11:08:33Z-
dc.date.available2016-08-28T11:08:33Z-
dc.date.issued2014-
dc.identifier.issn1567-1739-
dc.identifier.otherOAK-10951-
dc.identifier.urihttps://dspace.ewha.ac.kr/handle/2015.oak/227457-
dc.description.abstractInAs; Quantum dots; Solar cell; Trap states-
dc.languageEnglish-
dc.titleInfluence of InAs quantum dots on the transport properties of GaAs-based solar cell devices-
dc.typeArticle-
dc.relation.issue2-
dc.relation.volume14-
dc.relation.indexSCI-
dc.relation.indexSCIE-
dc.relation.indexSCOPUS-
dc.relation.indexKCI-
dc.relation.startpage192-
dc.relation.lastpage195-
dc.relation.journaltitleCurrent Applied Physics-
dc.identifier.doi10.1016/j.cap.2013.11.003-
dc.identifier.wosidWOS:000329966700009-
dc.identifier.scopusid2-s2.0-84888995496-
dc.author.googleKim H.-
dc.author.googlePark M.H.-
dc.author.googlePark S.J.-
dc.author.googleKim H.-S.-
dc.author.googleSong J.D.-
dc.author.googleKim S.-H.-
dc.author.googleChoi W.J.-
dc.author.googleKim D.-W.-
dc.contributor.scopusid김동욱(57203350633)-
dc.date.modifydate20210915111934-
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자연과학대학 > 물리학전공 > Journal papers
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