Advantageous reverse recovery behavior of pentacene/ZnO diode

Abstract

We report on the ac and reverse recovery behavior of organic pentacene/ZnO thin-film diodes fabricated on plastic substrate. The 50 nm thin pentacene was evaporated on 60 nm thin ZnO that was deposited by atomic layer deposition at 100°C. Our thin-film diode showed a much faster reverse recovery (∼70 ns) compared to that (∼5 μs) of the Si control diode, although it also reveals a lower forward current of ∼3 mA at 2.5 V than that of the Si control (10 mA at 0.6 V). It is because our thin-film diode has little influence of the minority carrier unlike the Si control diode. We thus conclude that the pentacene/ZnO thin-film diode is promising as a fast switching device. © 2010 The Electrochemical Society.