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공과대학
전자전기공학전공
Journal papers
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A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements
Title
A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elements
Authors
Lee S.
;
Lee H.
;
Kim S.
;
Shin H.
Ewha Authors
신형순
;
이승준
SCOPUS Author ID
신형순
; 이승준
Issue Date
2010
Journal Title
Solid-State Electronics
ISSN
0038-1101
Citation
Solid-State Electronics vol. 54, no. 4, pp. 497 - 503
Indexed
SCI; SCIE; SCOPUS
Document Type
Article
Abstract
Spin-transfer-torque (STT) switching in magnetic-tunnel-junction (MTJ) has important merits over the conventional field induced magnetic switching (FIMS) MRAM in avoiding half-select problem, and improving scalability and selectivity. Design of MRAM circuitry using STT-based MTJ elements requires an accurate circuit model which exactly emulates the characteristics of an MTJ in a circuit simulator such as HSPICE. This work presents a novel macro-model that fully emulates the important characteristics of STT-based MTJ. The macro-model is realized as a three terminal sub-circuit that reproduces asymmetric resistance versus current (R-I) characteristics and temperature dependence of R-I hysteresis of STT-based MTJ element. © 2010 Elsevier Ltd. All rights reserved.
DOI
10.1016/j.sse.2010.01.002
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