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Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures

Title
Change in the resistivity of Ge-doped Sb phase change thin films grown by chemical vapor deposition according to their microstructures
Authors
Kim J.-H.Lee K.Chae S.-J.Han I.-K.Roh J.-S.Park S.-K.Choi B.J.Hwang C.S.Cho E.Han S.
Ewha Authors
한승우
SCOPUS Author ID
한승우scopus
Issue Date
2009
Journal Title
Applied Physics Letters
ISSN
0003-6951JCR Link
Citation
Applied Physics Letters vol. 94, no. 22
Indexed
SCI; SCIE; SCOPUS WOS scopus
Document Type
Article
Abstract
This study examined the effects of the composition and microstructure on the electric resistivity of Ge-doped Sb phase change thin films grown by cyclic plasma enhanced chemical vapor deposition. Ge and Sb layers were deposited sequentially to form either a Gex Sby mixture or Ge/Sb nanolaminated films. While the resistivity of the nanolaminated films was higher, the Gex Sby mixture showed a lower resistivity than the pure Sb film. This can be explained by the increase in carrier density of the alloy, as confirmed by first-principles calculations. An abrupt change in resistance accompanying a phase change was observed at ∼210 °C. © 2009 American Institute of Physics.
DOI
10.1063/1.3151959
Appears in Collections:
자연과학대학 > 물리학전공 > Journal papers
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