Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강원 | * |
dc.date.accessioned | 2016-08-28T12:08:07Z | - |
dc.date.available | 2016-08-28T12:08:07Z | - |
dc.date.issued | 2009 | * |
dc.identifier.issn | 0947-8396 | * |
dc.identifier.other | OAK-5234 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/220100 | - |
dc.description.abstract | The contact potential between a single ZnO nanowire and Ti/Au contacts was estimated to be ∼30 meV by considering the Arrhenious plot of the two-probe resistance, the thermionic emission conduction, and the Fowler-Nordheim tunneling model. The net voltages applied to the contacts were calculated by subtracting the four-probe voltages from the two-probe voltages at the same currents. The activation energy of the four-probe resistance was about 2.4 mV which was 1/11th of that of the two-probe resistance. The Fowler-Nordheim plot clearly showed the crossover of the conduction mechanism from thermionic emission to tunneling regime as lowering the temperatures below T<100 K. © 2008 Springer-Verlag. | * |
dc.language | English | * |
dc.title | Contact barriers in a single ZnO nanowire device | * |
dc.type | Article | * |
dc.relation.issue | 2 | * |
dc.relation.volume | 94 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.startpage | 253 | * |
dc.relation.lastpage | 256 | * |
dc.relation.journaltitle | Applied Physics A: Materials Science and Processing | * |
dc.identifier.doi | 10.1007/s00339-008-4787-5 | * |
dc.identifier.wosid | WOS:000261257100007 | * |
dc.identifier.scopusid | 2-s2.0-57249086531 | * |
dc.author.google | Kim K. | * |
dc.author.google | Kang H. | * |
dc.author.google | Kim H. | * |
dc.author.google | Lee J.S. | * |
dc.author.google | Kim S. | * |
dc.author.google | Kang W. | * |
dc.author.google | Kim G.-T. | * |
dc.contributor.scopusid | 강원(7202402145) | * |
dc.date.modifydate | 20240116110212 | * |