Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신형순 | * |
dc.date.accessioned | 2016-08-27T04:08:37Z | - |
dc.date.available | 2016-08-27T04:08:37Z | - |
dc.date.issued | 2015 | * |
dc.identifier.issn | 0268-1242 | * |
dc.identifier.issn | 1361-6641 | * |
dc.identifier.other | OAK-15057 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/217280 | - |
dc.description.abstract | The stress effect in uniaxially strained single- and double-gate silicon-on-insulator n-type metal oxide-semiconductor field effect transistors (MOSFETs) with a (100) wafer orientation is analyzed. A model of silicon-thickness-dependent deformation potential (Dac-TSi) is introduced to accurately calculate the mobility using a Schrodinger-Poisson solver. Simulation results using the Dac-TSi model exhibit excellent agreement with the measured mobility for both the unstrained and strained conditions. Electron mobility enhancements with longitudinal and transverse tensile stress conditions are simulated as a function of silicon thickness. The mobility enhancement in the single-gate case has one peak point, whereas it produces two peak points in the double-gate case. An in-depth analysis reveals that this phenomenon results from the hump in the energy difference between the Delta 2 and Delta 4 valleys, which in turn results from the volume inversion in the double gate. | * |
dc.language | English | * |
dc.publisher | IOP PUBLISHING LTD | * |
dc.subject | mobility enhancement | * |
dc.subject | uniaxial strain | * |
dc.subject | deformation potential | * |
dc.subject | silicon thickness | * |
dc.subject | single gate | * |
dc.subject | double gate | * |
dc.title | Analysis of stress-induced mobility enhancement on (100)-oriented single- and double-gate n-MOSFETs using silicon-thickness- dependent deformation potential | * |
dc.type | Article | * |
dc.relation.issue | 4 | * |
dc.relation.volume | 30 | * |
dc.relation.index | SCI | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | * |
dc.identifier.doi | 10.1088/0268-1242/30/4/045009 | * |
dc.identifier.wosid | WOS:000354781400018 | * |
dc.author.google | Choi, Sujin | * |
dc.author.google | Sun, Wookyung | * |
dc.author.google | Shin, Hyungsoon | * |
dc.contributor.scopusid | 신형순(7404012125) | * |
dc.date.modifydate | 20240322125227 | * |