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Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing
- Title
- Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing
- Authors
- Islam; Md Mobaidul; Ali; Arqum; Park; Chanju; Lim; Taebin; Woo; Dong Yeon; Kwak; Joon Young; Jang; Jin
- Ewha Authors
- 곽준영
- Issue Date
- 2024
- Journal Title
- Communications Materials
- ISSN
- 2662-4443
- Citation
- Communications Materials vol. 5, no. 1
- Publisher
- Springer Nature
- Indexed
- SCOPUS
- Document Type
- Article
- Abstract
- Ferroelectric (FE) field-effect transistors are interesting for their non-destructive readout characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE ZrXAl1−XOY (ZAO) is demonstrated by compressive strain in contact with ZnO. The metal-ferroelectric-semiconductor-metal capacitor exhibits a substantial remnant polarization of 15.2 µC cm−2, along with a bowknot-like anti-clockwise hysteresis in the capacitance curves. The FE-ZAO gated ZnO thin-film transistor presents a large memory window (3.84 V), low subthreshold swing (55 mV dec−1), high ION/IOFF ratio (≈108), and low off-state current (≈1 pA). The grazing incidence X-ray diffraction and scanning transmission electron microscopy analyses reveal the ferroelectric rhombohedral phase (space group R3m) in the nanocrystal ZAO, containing an angle of ≈71.7° between the [111] and [11-1] directions with d111-spacing of 3.037 Å and d11-1-spacing of 2.927 Å. Finally, the memory and neuromorphic applications are analyzed by demonstrating multi-level memory and synaptic weight performance with a high learning accuracy of 91.82%. © The Author(s) 2024.
- DOI
- 10.1038/s43246-024-00495-3
- Appears in Collections:
- ETC > ETC
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