Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김동욱 | * |
dc.date.accessioned | 2023-07-31T16:31:28Z | - |
dc.date.available | 2023-07-31T16:31:28Z | - |
dc.date.issued | 2023 | * |
dc.identifier.issn | 2196-7350 | * |
dc.identifier.other | OAK-33404 | * |
dc.identifier.uri | https://dspace.ewha.ac.kr/handle/2015.oak/265427 | - |
dc.description.abstract | Due to their extraordinarily large optical absorption coefficients, transition metal dichalcogenides (TMDs) are gaining more and more attention for photovoltaic applications. Improving the device performance of a TMD solar cell requires an optimal device architecture and reliable fabrication processes. Metal/WS2-multilayer/metal heterojunctions are fabricated using lithography-free processes. 20 nm thick WS2 flakes are exfoliated on template-stripped Ag bottom electrodes, and then 10 nm thick Au top electrodes with a diameter of 2 µm are evaporated on the WS2 surface using holey carbon films as shadow masks. Current-sensing atomic force microscope measurements reveal that the Au/WS2/Ag devices exhibit prominent rectifying characteristics, indicating the formation of Schottky diodes. The power conversion efficiency of the Schottky junction is as high as 5.0%, when illuminated by a light-emitting diode with a peak wavelength of 625 nm and a power density of 2.5 mW cm−2. These devices also possess broadband and incident-angle-insensitive absorption capability due to the very large refractive indices and extremely small thickness of the WS2 flakes. The simple fabrication procedures proposed in this work demonstrate high-performance and high-yield TMD photovoltaic devices. © 2023 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH. | * |
dc.language | English | * |
dc.publisher | John Wiley and Sons Inc | * |
dc.subject | current-sensing atomic force microscope | * |
dc.subject | solar cell | * |
dc.subject | template-strip method | * |
dc.subject | vertical heterojunction | * |
dc.subject | WS <sub>2</sub> | * |
dc.title | High-Performance and Lithography-Free Au/WS2/Ag Vertical Schottky Junction Solar Cells | * |
dc.type | Article | * |
dc.relation.issue | 15 | * |
dc.relation.volume | 10 | * |
dc.relation.index | SCIE | * |
dc.relation.index | SCOPUS | * |
dc.relation.journaltitle | Advanced Materials Interfaces | * |
dc.identifier.doi | 10.1002/admi.202300031 | * |
dc.identifier.wosid | WOS:000971355200001 | * |
dc.identifier.scopusid | 2-s2.0-85152914515 | * |
dc.author.google | Nguyen A.T. | * |
dc.author.google | Wang J. | * |
dc.author.google | Cho E. | * |
dc.author.google | Lim S. | * |
dc.author.google | Kwon S. | * |
dc.author.google | Song J. | * |
dc.author.google | Zhou K. | * |
dc.author.google | Kim D.-W. | * |
dc.contributor.scopusid | 김동욱(57203350633) | * |
dc.date.modifydate | 20240123114549 | * |