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Field-driven Modulation of Spin Hall Magnetoresistance in Nanoscale-layered Pt/IrMn3/NiFe Heterostructures
- Title
- Field-driven Modulation of Spin Hall Magnetoresistance in Nanoscale-layered Pt/IrMn3/NiFe Heterostructures
- Authors
- Do, Nga T.; Thi Kim Hang Pham; Park, Seung Young; Kim, Tae-Hee
- Ewha Authors
- 김태희
- SCOPUS Author ID
- 김태희
- Issue Date
- 2022
- Journal Title
- JOURNAL OF MAGNETICS
- ISSN
- 1226-1750
2233-6656
- Citation
- JOURNAL OF MAGNETICS vol. 27, no. 4, pp. 335 - 340
- Keywords
- spin Hall magnetoresistance; antiferromagnets; Neel order; magnetic heterostructures; tunability
- Publisher
- KOREAN MAGNETICS SOC
- Indexed
- SCIE; SCOPUS; KCI
- Document Type
- Article
- Abstract
- Spin Hall magnetoresistance (SMR) emerges from both spin Hall effect (SHE) and inverse spin Hall effect (ISHE), which is usually investigated in a nonmagnetic heavy metal (NM) in contact with a ferromagnet (FM). Depending on the orientation of FM magnetization and spin polarization of NM layer, the transmission or reflection of the spin current at the FM\NM interface could occur. SMR was investigated in 1.5 nm NiFe\3.0 nm IrMn3\3.0 nm Pt magnetic heterostructures. IrMn3 thin film grown on ferromagnetic NiFe layer exhibits the glassy magnetic behavior and displays spin reorientation transition in the magnetic field-temperature space. Below the Neel temperature of IrMn3, the angle dependence of MR measurement in the xy and xz plane showed a normal positive SMR. However, a sign change in SMR was observed in the magnetic field applied in the yz plane. The switching from negative to positive SMR occurs at the field above a critical value of 6 kG. Our results provide a potential advantage for the source of spin flow in the signal in multilayer heterostructures and highlight the importance of magnetic structure (Neel vector) in AF, which opens the possible way to manipulate the spin current transportation and AF memory devices.
- DOI
- 10.4283/JMAG.2022.27.4.335
- Appears in Collections:
- 자연과학대학 > 물리학전공 > Journal papers
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